IndiumV3, Main, Repository, bibRecord, 000697

Polarization anisotropy of stacked InAs quantum dots on InGaAs/GaAs cross-hatch patterns

Identifieur interne : 000697 ( Main/Repository ); précédent : 000696; suivant : 000698

Polarization anisotropy of stacked InAs quantum dots on InGaAs/GaAs cross-hatch patterns

Auteurs : RBID : Pascal:13-0288346

Descripteurs français

Pascal (Inist)
- Anisotropie, Arséniure d'indium, Semiconducteur III-V, Composé III-V, Point quantique, Nanomatériau, Epitaxie jet moléculaire, Rapport aspect, Calcul liaison forte, Arséniure de gallium, Microscopie optique, Photoluminescence, InAs, Substrat GaAs, Substrat InGaAs, GaAs, 8107T, 8107, 8115H, 7855.

English descriptors

KwdEn :
- Anisotropy, Aspect ratio, Gallium arsenides, III-V compound, III-V semiconductors, Indium arsenides, Molecular beam epitaxy, Nanostructured materials, Optical microscopy, Photoluminescence, Quantum dots, Tight-binding calculations.

Abstract

Stacked InAs quantum dots (QDs) are grown on InGaAs/GaAs cross-hatch patterns (CHPs) by molecular beam epitaxy. The QDs, found almost exclusively on the cross-hatches, have greater lateral aspect ratio and are taller than typical QDs on flat surfaces. Polarization-resolved photoluminescent measurements show that both the QDs and CHPs exhibit polarization anisotropy. But while the CHP-related anisotropy is constant, the QD-related anisotropy is significantly enhanced or suppressed as the aspect ratio and height of the QD ensemble vary with the number of stacks. The polarization anisotropy observed agrees well with multiband tight-binding theoretical calculations of interband polarization in InAs/GaAs QDs.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 000800

Links to Exploration step

Pascal:13-0288346

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Polarization anisotropy of stacked InAs quantum dots on InGaAs/GaAs cross-hatch patterns</title>
<author><name sortKey="Chokamnuai, T" uniqKey="Chokamnuai T">T. Chokamnuai</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Semiconductor Device Research Laboratory (Nanotec Center of Excellence), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University</s1>
<s2>Bangkok 10330</s2>
<s3>THA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Thaïlande</country>
<wicri:noRegion>Bangkok 10330</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Rattanadon, P" uniqKey="Rattanadon P">P. Rattanadon</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Semiconductor Device Research Laboratory (Nanotec Center of Excellence), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University</s1>
<s2>Bangkok 10330</s2>
<s3>THA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Thaïlande</country>
<wicri:noRegion>Bangkok 10330</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Thainoi, S" uniqKey="Thainoi S">S. Thainoi</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Semiconductor Device Research Laboratory (Nanotec Center of Excellence), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University</s1>
<s2>Bangkok 10330</s2>
<s3>THA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Thaïlande</country>
<wicri:noRegion>Bangkok 10330</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Panyakeow, S" uniqKey="Panyakeow S">S. Panyakeow</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Semiconductor Device Research Laboratory (Nanotec Center of Excellence), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University</s1>
<s2>Bangkok 10330</s2>
<s3>THA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Thaïlande</country>
<wicri:noRegion>Bangkok 10330</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Kanjanachuchai, S" uniqKey="Kanjanachuchai S">S. Kanjanachuchai</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Semiconductor Device Research Laboratory (Nanotec Center of Excellence), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University</s1>
<s2>Bangkok 10330</s2>
<s3>THA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Thaïlande</country>
<wicri:noRegion>Bangkok 10330</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">13-0288346</idno>
<date when="2013">2013</date>
<idno type="stanalyst">PASCAL 13-0288346 INIST</idno>
<idno type="RBID">Pascal:13-0288346</idno>
<idno type="wicri:Area/Main/Corpus">000800</idno>
<idno type="wicri:Area/Main/Repository">000697</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Anisotropy</term>
<term>Aspect ratio</term>
<term>Gallium arsenides</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Indium arsenides</term>
<term>Molecular beam epitaxy</term>
<term>Nanostructured materials</term>
<term>Optical microscopy</term>
<term>Photoluminescence</term>
<term>Quantum dots</term>
<term>Tight-binding calculations</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Anisotropie</term>
<term>Arséniure d'indium</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Point quantique</term>
<term>Nanomatériau</term>
<term>Epitaxie jet moléculaire</term>
<term>Rapport aspect</term>
<term>Calcul liaison forte</term>
<term>Arséniure de gallium</term>
<term>Microscopie optique</term>
<term>Photoluminescence</term>
<term>InAs</term>
<term>Substrat GaAs</term>
<term>Substrat InGaAs</term>
<term>GaAs</term>
<term>8107T</term>
<term>8107</term>
<term>8115H</term>
<term>7855</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Stacked InAs quantum dots (QDs) are grown on InGaAs/GaAs cross-hatch patterns (CHPs) by molecular beam epitaxy. The QDs, found almost exclusively on the cross-hatches, have greater lateral aspect ratio and are taller than typical QDs on flat surfaces. Polarization-resolved photoluminescent measurements show that both the QDs and CHPs exhibit polarization anisotropy. But while the CHP-related anisotropy is constant, the QD-related anisotropy is significantly enhanced or suppressed as the aspect ratio and height of the QD ensemble vary with the number of stacks. The polarization anisotropy observed agrees well with multiband tight-binding theoretical calculations of interband polarization in InAs/GaAs QDs.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0>
</fA01>
<fA02 i1="01"><s0>JCRGAE</s0>
</fA02>
<fA03 i2="1"><s0>J. cryst. growth</s0>
</fA03>
<fA05><s2>378</s2>
</fA05>
<fA08 i1="01" i2="1" l="ENG"><s1>Polarization anisotropy of stacked InAs quantum dots on InGaAs/GaAs cross-hatch patterns</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>The 17th International Conference on Molecular Beam Epitaxy</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>CHOKAMNUAI (T.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>RATTANADON (P.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>THAINOI (S.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>PANYAKEOW (S.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>KANJANACHUCHAI (S.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>AKIMOTO (Katzuhiro)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>SUEMASU (Takashi)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="03" i2="1"><s1>OKUMURA (Hajime)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Semiconductor Device Research Laboratory (Nanotec Center of Excellence), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University</s1>
<s2>Bangkok 10330</s2>
<s3>THA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>University of Tsukuba</s1>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA15>
<fA20><s1>524-528</s1>
</fA20>
<fA21><s1>2013</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13507</s2>
<s5>354000506550351280</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2013 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>31 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>13-0288346</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Stacked InAs quantum dots (QDs) are grown on InGaAs/GaAs cross-hatch patterns (CHPs) by molecular beam epitaxy. The QDs, found almost exclusively on the cross-hatches, have greater lateral aspect ratio and are taller than typical QDs on flat surfaces. Polarization-resolved photoluminescent measurements show that both the QDs and CHPs exhibit polarization anisotropy. But while the CHP-related anisotropy is constant, the QD-related anisotropy is significantly enhanced or suppressed as the aspect ratio and height of the QD ensemble vary with the number of stacks. The polarization anisotropy observed agrees well with multiband tight-binding theoretical calculations of interband polarization in InAs/GaAs QDs.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A07T</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A07Z</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B80A15H</s0>
</fC02>
<fC02 i1="04" i2="3"><s0>001B70H55</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Anisotropie</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Anisotropy</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Arséniure d'indium</s0>
<s2>NK</s2>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Indium arsenides</s0>
<s2>NK</s2>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>III-V compound</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Point quantique</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Quantum dots</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Nanomatériau</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Nanostructured materials</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Rapport aspect</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Aspect ratio</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Calcul liaison forte</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Tight-binding calculations</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Arséniure de gallium</s0>
<s2>NK</s2>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Microscopie optique</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Optical microscopy</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Photoluminescence</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Photoluminescence</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>InAs</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Substrat GaAs</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Substrat InGaAs</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>GaAs</s0>
<s4>INC</s4>
<s5>49</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>8107T</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>8107</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>8115H</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>7855</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>273</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>MBE2012 International Conference on Molecular Beam Epitaxy</s1>
<s2>17</s2>
<s3>Nara JPN</s3>
<s4>2012-09-23</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000697 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 000697 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:13-0288346
   |texte=   Polarization anisotropy of stacked InAs quantum dots on InGaAs/GaAs cross-hatch patterns
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Polarization anisotropy of stacked InAs quantum dots on InGaAs/GaAs cross-hatch patterns

Polarization anisotropy of stacked InAs quantum dots on InGaAs/GaAs cross-hatch patterns

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri